| 摘要 |
The present invention is a silicon on insulator (SOI) transistor and its method of fabrication. According to the present invention, an opening is formed in the insulating layer formed on a single crystalline silicon substrate. An amorphous or polycrystalline silicon or silicon alloy is then formed in the opening on the single crystalline silicon substrate and on the insulating layer. The amorphous or polycrystalline silicon or silicon alloy in the opening and at least a portion of the amorphous or polycrystalline silicon or silicon alloy on the insulating layer is crystallized into a single crystalline silicon or silicon alloy film.
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