发明名称 POSITIVE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a photosensitive resin composition suitable for use under an exposure light source of &le;160 nm, particularly F<SB>2</SB>excimer laser light (157 nm), and specifically, to provide a positive resist composition having satisfactory transmittance when a light source of 157 nm is used and excellent in various properties such as suitability to coating, uniformity of film thickness, affinity to a developing solution, image forming property and dry etching resistance. <P>SOLUTION: The positive resist composition comprises a resin (A) having an alicyclic structure having at least one group selected from the collection consisting of F, Cl, hydroxy, cyano, alkyl and alkoxy and a repeating unit (Y) having at least one F atom, and a compound (B) which generates an acid upon irradiation with actinic rays or radioactive rays. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004029542(A) 申请公布日期 2004.01.29
申请号 JP20020188054 申请日期 2002.06.27
申请人 FUJI PHOTO FILM CO LTD 发明人 SASAKI TOMOYA;MIZUTANI KAZUYOSHI;KANNA SHINICHI
分类号 G03F7/039;C08F14/18;C08F20/16;H01L21/027 主分类号 G03F7/039
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