| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compound semiconductor single crystal in a high yield in an apparatus for growing the compound semiconductor by appropriately setting the wall thickness of a growth container corresponding to the crystal upright trunk part and raising the temperature of the outer circumference of the crystal upright trunk part for changing the solid-liquid interface shape of the crystal from the concave surface near to a flat state at the molten liquid side. SOLUTION: A cylindrical growth container 1 with a bottom to which a seed crystal 2 and a raw material 3 are charged, is vertically arranged, the raw materials are heated and melted at a fixed temperature distribution by electric furnace heaters 6, 7 by which the growth container is surrounded, and a compound semiconductor single crystal is grown to the vertical direction in the apparatus for growing the compound semiconductor single crystal. The wall thickness of the crystal upright trunk part C of the growth container 1 is set to 40%-80% of the wall thickness of other parts 1a, 1b. COPYRIGHT: (C)2004,JPO
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