发明名称 Mask inspection method, mask defect inspection system, and method of production of mask
摘要 A method of inspection for detecting pattern defects in a mask used for transferring a predetermined pattern of regions passing and blocking an exposure beam, comprising the steps of presetting different acceptable defect sizes for a plurality of conditions different in the line and/or space of the pattern, detecting a defect and recognizing the line and space of the pattern at the defect part, selecting an acceptable defect size corresponding to the line and space of the pattern recognized at the defect part and comparing it with the size of the detected defect, and determining a defect larger than the acceptable defect size as a defect requiring repair; a mask defect inspection system for inspection according to the method, and a mask production method including a step of the inspection.
申请公布号 US2004018436(A1) 申请公布日期 2004.01.29
申请号 US20030453714 申请日期 2003.06.03
申请人 ISHIKAWA KIICHI 发明人 ISHIKAWA KIICHI
分类号 G01N21/956;G03F1/00;G03F1/08;G03F1/84;G06T1/00;G06T7/00;(IPC1-7):G03F1/00;G06K9/00;G03F7/20 主分类号 G01N21/956
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