| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding wire for a semiconductor element and its manufacturing method which can synthetically improve a junction property of a wedge junction part or a fatigue characteristic, a suppression of a wire flow, or a leaning property of a ball upright part in order to materialize a narrow pitch connection, and moreover has industrially excellent mass production. <P>SOLUTION: In the bonding wire and its manufacturing method, in a crystal grain formation in section in a longitudinal direction of the bonding wire when a radius of the wire is R, a part from a center of the wire to R/2 is a center part, and the outside is an outer peripheral part, regarding a ratio Rc of an area of a crystal grain having a [111] azimuth for the area of the crystal grain having a [100] azimuth among crystal azimuths in the longitudinal direction of the wire in the center part, and a ratio Rs of the area of the crystal grain having the [111] azimuth for the area of the crystal grain having the [100] azimuth among the crystal azimuths in the longitudinal direction of the wire in the outer peripheral part, an absolute value of a differential rate of the both ¾1-Rc/Rs¾×100(%) is 30% or more. <P>COPYRIGHT: (C)2004,JPO |
