| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for selectively etching or almost completely peeling a carbon film against a resist film. <P>SOLUTION: An amorphous carbon film 46 is formed on a substrate on which a film to be patterned is formed. A resist pattern 47 is formed on the surface of the amorphous carbon film. At least one gas of a group configured of gas containing reducing fluoride gas, halogen gas, and oxygen is used, and the substrate is heated at 70°C to 450°C, and the amorphous carbon film in an area which is not covered with any resist pattern is removed by dry etching. <P>COPYRIGHT: (C)2004,JPO |
