| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To properly process defective address data in the processes after wafer test has been completed during a nonvolatile memory production when a defective cell that is newly detected or discovered is to be replaced by a redundancy cell. <P>SOLUTION: In a nonvolatile memory, the followings are provided, i.e., an address latch 14 which is capable of latching addresses being inputted from the external, a plurality of address registers 45a to 45d which hold defective addresses and indicate corresponding redundancy memories when the addresses are selected, a selector 81 which collectively selects a plurality of address registers and a control circuit 33 which generates a control signal LOAD to set holding data of address latches into address registers by an external input. <P>COPYRIGHT: (C)2004,JPO</p> |
