| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory (MRAM) or the like operable at a high speed with a high capacity and high mass-productivity by solving problems of instability of reading data read from a resistive element, in particular, from a magneto-resistive element and dispersion in the resistance of the magneto-resistive element or the like caused at mass production. SOLUTION: Each memory cell being a component of the MRAM includes: the magneto-resistive element R22; a fixed resistive element r22 whose resistance is fixed, and a FET: T22, the magneto-resistive element R22 and the fixed resistive element r22 are connected at their on-side terminals, and an output section S is provided to the connection part. The output section S is connected to a source (or a drain) of the FET: T22, and electrically connected to a data line D2 connected to the drain (or source) of the FET: T22 by controlling a level of a word line W2 connected to the gate of the FET: T22. Further, controlling a level of a bit line B2 supplies power to the magneto-resistive element R22 and the fixed resistive element r22. In this case, a voltage caused in the output section S is given to the data line D2. COPYRIGHT: (C)2004,JPO
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