| 摘要 |
PROBLEM TO BE SOLVED: To increase a recovery quantity of a combined specific material in a sensor using total reflection attenuation and measuring a combined state of a sensing material and the specific material in a sample. SOLUTION: A light beam 20 enters an interface 12a between a dielectric block 11 and a thin film layer 12 of a measurement chip 10 having a supplied sample liquid 15 so as to obtain various incident angles, is totally reflected by the interface 12a and detected by a photodetector 23. The combined state of the sensing material 17 in a well 16 and the specific material in the sample liquid 15 is measured. The thin film layer 12 is provided on a bottom face of the well 16. A thin film layer 14 is provided on a side face. The sensing material 17 is fixed to the thin film layers. An area fixed to the sensing material 17 is larger than that of a conventional sensor provided with only the thin film layer 12 on the bottom face. A large quantity of the specific material is combined with the sensing material 17. After the combined state is measured, the recovery quantity increases when a desorption process is applied and the combined specific material is recovered. COPYRIGHT: (C)2004,JPO
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