发明名称 Flash storage medium having a NAND-type flash memory
摘要 A flash storage medium includes a means which converts logical sector addresses inputted from a predetermined host apparatus to logical cluster addresses constituted by logical sector addresses, to control medium inside based upon a cluster unit constituted by sectors that form an access unit to flash memory. A user block area constituted by flash memory physical blocks corresponding to the logical cluster addresses and an erasing block area constituted by flash memory physical blocks in an erased state are specified in said flash memory. Furthermore, the storage medium includes a means which acquires said physical blocks associated with each other from said logical sector addresses when there is a logical cluster address having two physical blocks associated with each other, and effective and ineffective data are respectively located on these two blocks, and a means which exchanges a physical block between said erasing block area and said user block area.
申请公布号 US2004019761(A1) 申请公布日期 2004.01.29
申请号 US20030374130 申请日期 2003.02.27
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUKUZUMI TOMOYA
分类号 G11C16/02;G06F12/00;G06F12/02;G11C16/04;(IPC1-7):G06F12/10 主分类号 G11C16/02
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