发明名称 |
HETERO INTEGRATION OF SEMICONDUCTOR MATERIALS ON SILICON |
摘要 |
<p>High quality gallium arsenide (GaAs) (38) is grown over a thin germanium layer (26) and co-exists with silicon (40) for hetero-integration of devices. A bonded germanium wafer of silicon (22), oxide (24), and germanium (26) is formed and capped (30). The cap (30) and germanium layer (26) are partially removed so as to expose a silicon region (32) and leave a stack (31) of oxide, germanium, and capping layer on the silicon. Selective silicon is grown over the exposed silicon region. Silicon devices (36) are made in the selectively grown region of silicon (34). The remaining capping layer (30) is etched away to expose the thin layer of germanium (26). GaAs (38) is grown on the thin germanium layer (26), and GaAs devices (39) are built which can interoperate with the silicon devices (36).</p> |
申请公布号 |
WO2004010496(A1) |
申请公布日期 |
2004.01.29 |
申请号 |
WO2003US20344 |
申请日期 |
2003.06.27 |
申请人 |
MOTOROLA, INC. |
发明人 |
VENKATESAN, SURESH;MANIAR, PAPA, D. |
分类号 |
H01L21/20;H01L21/762;H01L21/8258;H01L27/06;(IPC1-7):H01L21/825 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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