| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing a main current energizing region and reducing an ON-state voltage. SOLUTION: In a first region 3 and a second region 4 constituting double reduced surface fields and the well region 2 of the outermost periphery, by forming an emitter region 51, an insulation film 6 to be a gate insulation film, and a gate electrode 81 in the well region 2 facing the second region, a horizontal type MOSFET is formed inside a breakdown strength structure 201. When a vertical type IGBT is turned on, the horizontal type MOSFET is also turned on, the main current energizing region is increased and the ON-state voltage is reduced. COPYRIGHT: (C)2004,JPO
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