| 摘要 |
The invention concerns a method for selecting faulty dielectrics (2) of a semiconductor component (1), in particular faulty transistor gates of a MOS component. Said method consists in producing, during the production process proper of said component (1) and above the already structured dielectrics (2), a control layer (3) for simultaneous electrical contact of said dielectrics; simultaneously verifying the functionality of the dielectrics by applying an electric voltage on the control layer (3), located on the dielectrics (2), and on the substrate (4), located beneath the dielectrics (2) and in eliminating or structuring the control layer (3) to carry on the production process proper of said component (1). |
