NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To form an electrically erasable memory cell with a MOS transistor having a single gate electrode instead of a laminated structure.

SOLUTION: The nonvolatile semiconductor storage device is provided with a selection transistor 11 formed of a MOS transistor having a gate electrode; a bit line BL connected with a drain area of the selection transistor 11; a word line WL connected with the gate electrode of the selection transistor 11; a cell transistor 12 which is provided with a gate electrode that is not connected with both and is in potentially floating state, and of which drain area is connected with a source area of the selection transistor 11, and which is formed of a MOS transistor with the same polarity as the selection transistor 11; and a source line SL connected with a source area of the cell transistor 12.

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