| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a field effect transistor that can prevent impurities from entering from a gate electrode and eliminate the degradation of operation due to nitrogen content. SOLUTION: A silicon oxide film 13 containing a nitrogen element is formed on an active area 12 of a silicon substrate 10 in a pretreatment step. In a segregation step for heat treatment in a non-oxidative gas atmosphere, a silicon nitride film layer 14 is segregated on a boundary between the silicon substrate 10 and the silicon oxide film 13. Then, an unnecessary silicon oxide film 13 on the silicon nitride film layer 14 is removed, and while the exposed silicon nitride film layer 14 is permeated, a silicon oxide film layer 15 is formed thereunder by thermal diffusion. Furthermore, a gate electrode 16 is formed on a gate insulation film made of the silicon nitride film layer 14 and the silicon oxide film layer 15. COPYRIGHT: (C)2004,JPO
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