METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT USING THE SAME, ELECTRO-OPTICAL DEVICE AND ELECTRONIC UNIT

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film semiconductor device in which a semiconductor film formed on a substrate is used as an active region of the semiconductor device and crystallinity of the semiconductor film and an electric characteristic of the device are good and reliability of a gate insulating film is high. SOLUTION: A base protection film 112 is formed on a quartz substrate 111 and the semiconductor film 113 is formed. The semiconductor film 113 is melted and crystallized by irradiation with light. The semiconductor film 113 is thermally oxidized and a first gate insulating film 116 is formed. A second gate insulating film 117 is deposited by a CVD method. COPYRIGHT: (C)2004,JPO