发明名称 |
ENHANCED T-GATE STRUCTURE FOR MODULATION DOPED FIELD EFFECT TRANSISTORS |
摘要 |
A structure and a method are disclosed of an enhanced T-gate for modulation doped field effect transistors (MODFETs). The enhanced T-gate has insulator spacer layers sandwiching the neck portion of the T-gate. The spacer layers are thinner than the T-bar portion overhang. The insulating layer provides mechanical support and protects the vulnerable neck portion of the T-gate from chemical attack during subsequent device processing, making the T-gate structure highly scalable and improving yield. The use of thin conformal low dielectric constant insulating layers ensures a low parasitic gate capacitance, and reduces the risk of shorting gate and source metallurgy when source-to-gate spacings are reduced to smaller dimensions.
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申请公布号 |
US2004016972(A1) |
申请公布日期 |
2004.01.29 |
申请号 |
US20020207352 |
申请日期 |
2002.07.29 |
申请人 |
SINGH DINKAR;SAENGER KATHERINE LYNN;PATEL VISHNUBHAI V.;GRILL ALFRED;KOESTER STEVEN JOHN |
发明人 |
SINGH DINKAR;SAENGER KATHERINE LYNN;PATEL VISHNUBHAI V.;GRILL ALFRED;KOESTER STEVEN JOHN |
分类号 |
H01L21/285;H01L29/423;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/285 |
代理机构 |
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主权项 |
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地址 |
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