SEMICONDUCTOR ABRASIVE, PROCESS FOR PRODUCING THE SAME AND METHOD OF POLISHING

摘要

A semiconductor abrasive comprising cerium oxide abrasive grains, water and an additive wherein the additive is an anionic surfactant or water-soluble organic polymer, such as ammonium polyacrylate, and the pH value at 25ºC is in the range of 3.5 to 6 and wherein the concentration of additive is in the range of 0.01 to 0.5% based on the total mass of abrasive. This abrasive simultaneously exhibits dispersion stability, excellent scratch property and excellent polishing planarization characteristics. In particular, this abrasive realizes excellent polishing planarization characteristics having reduced dishing dispersion at the polishing of a semiconductor substrate comprising silicon base plate (1) and, superimposed thereon, silicon nitride film (3) and silicon oxide film (2). Further, the time required for pattern wafer polishing can be reduced by the use of this abrasive.