| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of preventing a semiconductor substrate from being cracked due to press-contact stress for the formation of bumps, improving product yield in a bump formation process, corresponding to fineness, and reducing costs. <P>SOLUTION: In the semiconductor device manufacturing method, a destructed layer 31 on the rear face 1b of a silicon wafer 1 is removed by grinding the rear face 1b and then mirror-polishing the ground rear face 1b to form a silicon wafer 41 having a rear face 41b from which a crystal layer 32 on the inside of the destructed layer 31 is exposed, and then bumps 6 are formed on prescribed positions on the surface 1a of the silicon wafer 41. <P>COPYRIGHT: (C)2004,JPO |
