| 摘要 |
PROBLEM TO BE SOLVED: To realize high-efficiency etching treatment with good reproducibility by removing etching side-product, which was produced in the previous wafer treatment process, in the process of etching treatment. SOLUTION: This manufacturing method of a semiconductor device treats a semiconductor substrate by using plasma treatment equipment that is provided with an etching treatment room 5, a substrate stage 10 on which the semiconductor substrate is to be placed, a plasma generation means to generate plasma 4 in the etching treatment room, and a treatment gas introduction means 8 to introduce a treatment gas into the etching treatment room. The method comprises an etching process in which a first treatment gas is introduced into the etching treatment room so as to etch the semiconductor substrate, and a decomposition/removal process in which a second treatment gas is introduced into the etching treatment room so as to decompose and remove the etching side-product produced in the etching process. COPYRIGHT: (C)2004,JPO
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