METHOD AND DEVICE FOR MEMORY DETECTION

摘要

PROBLEM TO BE SOLVED: To provide a method and a device which are used to read data from a memory cell such as a ferroelectric substance memory cell (4) in a memory device (102). SOLUTION: One sense amplifier bit line (SABL/SABL') is connected to a precharge voltage (VREF) and another amplifier bit line (SABL'/SABL) is connected to the memory cell (4). COPYRIGHT: (C)2004,JPO