Method of pattern layout of a photomask for pattern transfer

摘要

A method for the layout of a photomask for pattern transfer according to the present invention is provided with the step of positioning main patterns for transferring an image to a photosensitive film; the step of temporarily positioning auxiliary patterns, which do not substantially transfer an image to a photosensitive film; the step of selecting an auxiliary pattern, of which an end side forming one end thereof partially overlaps an end side forming one end of the main pattern so as to make contact; and the step of adjusting the position of the selected auxiliary pattern so that the end side of the selected auxiliary pattern completely overlaps the end side of the main pattern so as to make contact. It becomes possible to easily carry out inspection for mask defects while achieving an increase in resolution by using such a method for layout of a photomask for pattern transfer.