LOW TEMPERATURE DIELECTRIC DEPOSITION USING AMINOSILANE AND OZONE

摘要

This invention describes a method of depositing dielectric layers or films with good step coverage and ability to fill high-aspect ratio device structures at low temperature (20 - 400 C) by CVD processes through the use of aminosilane or silicon alkylamide compounds as the silicon precursor with an oxidizerthat includes ozone. The present invention further provides a method of depositing silicon oxynitride (SiO>xy<) films at low temperatures using aminosilane or silicon alkylamide compounds as a silicon precursor, with an oxidizer that includes ozone, and ammonia (NH>3<).