| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory element capable of assuring a sufficient capacitance and also capable of preventing bridging with an adjoining storage node electrode and a method for manufacturing the same. <P>SOLUTION: The semiconductor memory element comprises a semiconductor substrate 100, interlayer insulating films 150 and 170 formed on the semiconductor substrate 100, storage node contact plugs 185 formed inside the interlayer insulating films 150 and 170, storage node electrodes 250 which contact with the storage node contact plugs 185 and comprise multiple conductive line patterns having a constant height and spaced at a constant interval, and a support stage 240 which perpendicularly crosses the conductive line patterns of the storage node electrode 250 and is secured to the storage node electrode 250. The storage node electrode 250 is separated for each unit cell. <P>COPYRIGHT: (C)2004,JPO |
