| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory in which memory cell density is high and current leakage is small. <P>SOLUTION: A memory storage device (10) comprises first and second memory cells (14) each comprising an upper end and a lower end. First and second one-dimensional conductors (16) have almost identical plane, parallel to each other, extending in one dimension. The first one-dimensional conductor crosses the lower end of the first memory cell while the second one-dimensional conductor crosses the upper end of the second memory cell. A first two-dimensional conductor (18) extends in two dimension and crosses the upper end of the first memory cell while a second two-dimensional conductor extends in two dimension and crosses the lower end of the second memory cell. First three-dimensional conductors (32 and 34) extend in three dimension, are disposed between the first memory cell and the second memory cell, and couple the first secondary conductor to the second secondary conductor. <P>COPYRIGHT: (C)2004,JPO |
