发明名称 |
A METHOD OF DEPOSITING LOW K BARRIER LAYERS |
摘要 |
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. |
申请公布号 |
WO03043073(A3) |
申请公布日期 |
2004.01.29 |
申请号 |
WO2002US36229 |
申请日期 |
2002.11.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
XIA, LI-QUN;XU, PING;YANG, LOUIS |
分类号 |
C23C16/32;H01L21/314;H01L21/316;H01L21/768 |
主分类号 |
C23C16/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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