| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent degradation in device characteristics which is caused in a process to form a ferroelectric capacitor on a substrate. <P>SOLUTION: The manufacturing method comprises a process where a cylindrical lower electrode film 9, a part of which is embedded, is formed in an opening part 1 formed at an insulating film 6, a process where a ferroelectric film 10 is deposited over the entire surface of the substrate where the insulating film 6 and the lower electrode film 9 are formed, a process where the ferroelectric film 10 on the surface of the insulating film 6 is selectively removed by wet etching while the ferroelectric film 10 on the surface of the lower part electrode film 9 is left alone, and a process where an upper electrode film 11 is deposited and patterned over it. <P>COPYRIGHT: (C)2004,JPO |
