| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pattern forming method independent of the density of a pattern and giving a pattern having good line width accuracy to design value. <P>SOLUTION: In the pattern forming method in which the surface layer of a substrate 1 is patternwise etched using a resist pattern as a mask, the pattern forming region of the surface of the substrate 1 is divided into a dense first region 2a and a thin second region 2b in accordance with pattern forming density. The first region 2a is then patternwise etched using a resist pattern as a mask, and in another step, the second region 2b is patternwise etched, using a resist pattern as a mask. <P>COPYRIGHT: (C)2004,JPO</p> |
