MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT, INTEGRATED CIRCUIT USING ITS ELEMENT, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT AND METHOD AND DEVICE FOR FORMING FILM

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device in which interface state mass density can be inhibited at a low value by forming a first gate insulating film by a plasma oxidation and excellent device characteristics having a quick stable response time can be obtained. SOLUTION: In the manufacturing process of a thin-film transistor, steps from a preheating (the step A1) to the film formation (the step A6) of the first gate insulating film are conducted under the state of an exposure to an atmospheric air while steps from the preheating (the step A1) to a hydrogen terminating (the step A5) are conducted under a decompression of 1 Torr or lower, and the film formation (a step A6) of the first gate insulating film is conducted by the plasma oxidation at atmospheric pressure of 100 Torr or higher. COPYRIGHT: (C)2004,JPO