发明名称 PLASMA SPUTTER TYPE MULTI-TARGET NEGATIVE ION SOURCE
摘要 <P>PROBLEM TO BE SOLVED: To switch a plurality of ion species while maintaining a vacuum condition of a chamber 1 in a plasma sputter type negative ion source. <P>SOLUTION: In this plasma sputter type negative ion source generating plasma 13 inside the hermetic chamber 1, sputtering a sputter target 6 by the plasma 13, and emitting ions of a target atom, multiple kinds of sputter targets 6 including a predetermined target element are arranged inside the hermetic chamber 1, and positive ions inside the plasma 13 are guided to one target selected from multiple kinds of sputter targets 6. The positive ion is guided to the target when moved to the vicinity of one sputter target aimed at a drop electrode 10, to which negative voltage is applied, or a hole part in a partition plate 11 having the hole in the center. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004030966(A) 申请公布日期 2004.01.29
申请号 JP20020181474 申请日期 2002.06.21
申请人 WAKASAWAN ENERG KENKYU CENTER 发明人 KURITA TETSUO;HATORI SATOSHI
分类号 G21K1/00;H01J27/20;H01J37/08;H05H1/48;H05H5/06;H05H7/08 主分类号 G21K1/00
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