| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a sulfonyldiazomethane compound suitable for a resist material exhibiting less foreign materials especially after its application, development and peeling, and excellent in a pattern profile shape after the development, especially as a chemically amplifying type resist material, a photoacid-forming agent, and the resist material by using the same, and to provide a method for pattern-formation. <P>SOLUTION: The new sulfonyldiazomethane compound is expressed by formula (1) (wherein, R<SP>1</SP>is H, a 1-4C linear chain, branched or cyclic alkyl or alkoxyl; G is SO<SB>2</SB>or CO; R<SP>2</SP>is a 1-10C linear chain, branched or cyclic alkyl or a 6-14C aryl: (p) is 1 or 2; (q) is 0 or 1: (p+q)=2; (m) is 2-11 integer; (n) is 0-3 integer; and (k) is 0-7 integer). The chemically amplifying type resist material using the sulfonyldiazomethane compound is excellent in resolution and an extent of focal point margin, less in line width change and shape deterioration even on performing PED (post exposure delay) over a long time, exhibiting less foreign materials after its application, development and peeling and excellent in the pattern profile shape after the development and exhibiting a high resolution suitable for a very fine processing. <P>COPYRIGHT: (C)2004,JPO |
