| 发明名称 |
THIN FILM FORMING METHOD AND THIN FILM FORMING APPARATUS |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film forming method which dissolves a raw material in a low temperature/high pressure high density supercritical state in order to supply the raw material having a higher concentration than that in a CVD method and bringing a solute dissolved in the supercritical state to a supersaturated state but not to be in a beam state while keeping the supercritical state without realizing a large degree of supersaturation due to rapid quenching. <P>SOLUTION: The solute being a thin film raw material is disssolved using a solvent having a critical point in a constant temperature and pressure region by controlling the density of the solvent in the temperature and pressure region. Thereafter, a fluid in which the thin film raw material is dissolved is spread over the surface of a substrate and the density of the solvent is controlled to lower the solubility of the solute and the supersaturated state is realized to form a thin film. <P>COPYRIGHT: (C)2004,JPO</p> |
| 申请公布号 |
JP2004025084(A) |
申请公布日期 |
2004.01.29 |
| 申请号 |
JP20020187416 |
申请日期 |
2002.06.27 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
SHIMIZU TAKASHI;YAMADA HIROTOSHI;SUZUKI HIDEKAZU;ITO JUNJI |
| 分类号 |
B01J3/00;B01J3/02;B01J19/00;H01L21/31;H01L21/316;(IPC1-7):B01J3/00 |
主分类号 |
B01J3/00 |
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