| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device and an inspection method therefor that relieve defects of bit lines being a cause to defects of memory cells in a mask ROM so as to improve the yield. <P>SOLUTION: The memory cell circuit of the semiconductor storage device is provided with: source lines SLp, SLq placed in parallel with bit lines BLp, BLq; and transistors QSBp, QSSp, QSBq, QSSq, QTBp, QTSp, QTBq, QTSq receiving a redundant control signal CNG and its logically NOT signal at their gates. On the occurrence of a short-circuit fault between the bit lines BLp and BLq, the circuit controls that e.g., a column selection signal COLm goes to an H level and the redundant control signal CNG goes to an H level when the bit line BLp is selected thereby bringing the bit lines BLp and BLq in a short-circuit state to a ground level and allowing data of the memory cell to be read from a sense amplifier 11 via the source line SLp. The data output path is switched to relieve defective reading due to the short-circuit of the bit lines in this way so as to enhance the yield. <P>COPYRIGHT: (C)2004,JPO</p> |
