发明名称 |
Semiconductor device with insulator and manufacturing method therefor |
摘要 |
It is possible to obtain a semiconductor device with an element isolation structure showing a good isolation characteristic by filing an interior of a minute trench with a good quality insulating film free of a defect such as a void, and a manufacturing method therefor. The semiconductor device includes a semiconductor substrate and an isolation insulator. A trench is formed on a main surface of the semiconductor substrate. The isolation insulator is formed in an interior of the trench using a thermal oxidation method to isolate element forming regions from each other on the main surface of the semiconductor substrate. The isolation insulator is a lamination body formed by a plurality of oxide film layers.
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申请公布号 |
US2004016987(A1) |
申请公布日期 |
2004.01.29 |
申请号 |
US20030335943 |
申请日期 |
2003.01.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SAWADA MAHITO;TOBIMATSU HIROSHI;HAYASHIDE YOSHIO |
分类号 |
H01L21/76;H01L21/205;H01L21/316;H01L21/762;H01L21/8234;(IPC1-7):H01L21/76;H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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