| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetron plasma processing apparatus in which plasma leakage to a lower part of a baffle plate in a chamber and abnormal discharge are hardly generated. <P>SOLUTION: The processing apparatus is equipped with a chamber 1 wherein a wafer to be processed is inserted and it is held airtightly, an upper electrode 20 and a lower electrode 2 which are installed in the chamber 1 and face each other, a high frequency power source 15 for forming an electric field between the electrodes 20 and 2, a treated gas supply system 23 for supplying treated gas in the chamber 1, a magnetic field forming means 30 for forming a magnetic field which intersects perpendicularly with an electric field direction and goes on one direction, and a baffle plate 10 for masking the plasma which are formed so as to cover a space between an inner wall of the chamber and the lower electrode. The baffle plate 10 is constituted so that it inclines up toward an end portion side from a central side, in a vertical section of the baffle plate. <P>COPYRIGHT: (C)2004,JPO |
