METHOD AND DEVICE FOR SILICON BASE THIN FILM FORMATION, AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a silicon base thin film formation device which can form a silicon base thin film which has high quality and excellent uniformity.

SOLUTION: In the device, a plurality of silicon base thin films are formed on a substrate by using a plurality of deposition film formation containers. A high frequency power of a first frequency chosen from 30MHz or more and 500MHz or less is applied to a power impressing electrode inside a deposition film formation container which is arranged so that the clearance between a power impressing electrode and the substrate 204 is 10mm±5mm. A high frequency power of a second frequency chosen from 10MHz or more and 30MHz or less is applied to a power impressing electrode inside a deposition film formation container which is arranged so that the clearance between the power impressing electrode and the substrate 204 is 20mm±5mm.

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