| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, which suppress the occurrence of a void defect or the like caused by the phenomenon of Cu atom transportation without deteriorating the property of Cu embedment. SOLUTION: In a damascene process of forming Cu wiring using a CMP method, after Cu 5 is grown by plating in a wiring groove or a via hole, or after Cu 5 is polished by CMP, Al 6 or a material containing Al is formed on Cu 5, and Al 6 is fully solved in Cu 5 to form a Cu-Al alloy by a heat treatment at a temperature around 200°C-270°C. By forming Al 6 on Cu 5, an increase in the aspect ratio of the wiring groove or the via hole is prevented. Besides, by alloying the metals in the wiring or the via, the diffusion coefficient is reduced to suppress the occurrence of the void defect, which is caused by the transfer of Cu atoms. As a consequence, the reliability of the wiring is enhanced. COPYRIGHT: (C)2004,JPO |
