| 摘要 |
PROBLEM TO BE SOLVED: To provide a high withstand voltage IC at low manufacturing costs as a high withstand voltage bonding terminating structure widely applicable for an n channel or p-channel high withstand voltage lateral MOSFET or the like by providing a second area resistant to a high voltage, and separating a vertical power device from an integrated circuit unit, wherein the high withstand voltage is maintained without decreasing the withstand voltage even when wiring crosses. SOLUTION: With a high withstand voltage bonding terminating structure HVJT interposed, one side is provided with a p-type source area 56(11) selectively formed on the surface of a eighth area 8, a p-type channel area 54 on the surface of the eighth area 8 interposed between a ninth area 9 and the p-type source area 56(11), a second gate insulating film 53(13) formed on the p-type channel area 54, a fourth gate electrode G2 on the gate insulating film 53(13), and a second source electrode S2 electrically connected to the p-type source area 56(11), and the other side is provided with a second drain electrode D2 electrically connected through a p-type high concentration area 55(11) to the ninth area 9. COPYRIGHT: (C)2004,JPO |
