| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a larger rounding of active edge can be obtained by less oxidation in a trench, the trench can easily be filled up and a parasitic transistor is suppressed, and to provide a manufacturing method of the device. SOLUTION: A prescribed conductivity type impurity is introduced on a surface of a semiconductor substrate with a mask pattern 12 of a silicon semiconductor substrate 11 as a mask. Thus, an impurity region 13 larger than a mask pattern size is formed. The semiconductor substrate 11 is etched by prescribed depth with the mask pattern 12 as the mask. The trench TR is formed. A next oxidation processing is dry oxidation and it can be processed in shorter time than conventional technology. This is because oxidation speed of a part of the impurity region 13 becomes large, and a satisfactory round shape can be obtained even at an oxidation temperature lower than a conventional one. A silicon oxide film is embedded by a CVD method, and an STI part 32 is formed. COPYRIGHT: (C)2004,JPO
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