发明名称 FERROELECTRIC GATE DEVICE
摘要 <p>A ferroelectric gate device includes a ferroelectric capacitor (1), a switch element (2) functioning as a resistor or a capacitor according to a voltage applied, a field effect transistor (6) having a source, drain, and a gate. The ferroelectric capacitor (1) has one end having an input terminal (IN). The other end of the ferroelectric capacitor (1) is connected to one end of the switch element (2). The other end of the switch element (2) is connected to the gate of the field effect transistor (6). When voltage is applied to the input terminal and a voltage equal to or above the coercive voltage (Vc) of the ferroelectric substance of the ferroelectric capacitor (1) is applied to the ferroelectric capacitor (1), the switch element (2) functions as a resistor. When voltage is applied to the input terminal and a voltage smaller than the coercive voltage (Vc) of the ferroelectric substance of the ferroelectric capacitor (1) is applied to the ferroelectric capacitor (1), the switch element (2) functions as a capacitor.</p>
申请公布号 WO2004010503(A1) 申请公布日期 2004.01.29
申请号 WO2003JP08951 申请日期 2003.07.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;TOYODA, KENJI;OHTSUKA, TAKASHI 发明人 TOYODA, KENJI;OHTSUKA, TAKASHI
分类号 G11C11/22;H01L21/8246;H01L27/105;H01L29/866;H03K17/62;(IPC1-7):H01L27/105 主分类号 G11C11/22
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