| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which can assure a prescribed bonding strength. <P>SOLUTION: On an N-type GaAlAs layer 3, an aluminum electrode layer 5 is formed. On the surface of the aluminum electrode layer 5, gold wires are bonded. When analyzing three components of aluminum, carbon, and oxygen in the surface of the aluminum electrode layer 5 by Auger electron analysis, the percentage of aluminum is 85% or above. <P>COPYRIGHT: (C)2004,JPO |
