发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To realize rapidity of mode transition and reduced power consumption in a semiconductor device having a constitution which can control well potential according to an operation mode. SOLUTION: An electrically connectable charge transmission part is provided in response to mode transition between an n-well and a p-well, wherein a transistor constituting a CMOS logic circuit is formed. Since the charge transmission part transmits redundant charge of the n-well to the p-well in mode transition which requires lowering of the potential of the n-well and rising of the potential of the p-well, it is possible to carry out mode transition at a high speed without consuming electric charge uselessly. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004031411(A) 申请公布日期 2004.01.29
申请号 JP20020181493 申请日期 2002.06.21
申请人 RENESAS TECHNOLOGY CORP 发明人 KONO TAKASHI
分类号 H01L27/04;H01L21/822;H01L21/8238;H01L27/092;H03K3/356;H03K19/0948;(IPC1-7):H01L21/822;H01L21/823;H03K19/094 主分类号 H01L27/04
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