发明名称 Semiconductor device having a trench isolation structure and method for fabricating the same
摘要 A device isolation structure in a semiconductor device and a method for fabricating the same are disclosed. A trench is formed in a semiconductor substrate to confine a plurality of active regions, an insulating material is deposited to fill the trench and the insulating material having a portion extending from the trench to above the semiconductor substrate, and a trench oxidation preventive film is formed on the insulating material. The semiconductor device preferably further includes a gate line extending in one direction on the semiconductor substrate having the trench oxidation-preventive film, and a sidewall spacer formed a sidewall of the gate line, wherein the trench oxidation-preventive film is disposed on the insulating material and disposed under the gate line and the sidewall spacer.
申请公布号 US2004018676(A1) 申请公布日期 2004.01.29
申请号 US20030623918 申请日期 2003.07.21
申请人 PARK TAI-SU 发明人 PARK TAI-SU
分类号 H01L21/76;H01L21/762;(IPC1-7):H01L21/823 主分类号 H01L21/76
代理机构 代理人
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