| 摘要 |
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer ( 10 ) is formed by etched openings at least one spring element configuration ( 7 ) and at least one seismic mass ( 8 ) connected to said spring element configuration ( 7 ). According to the invention, the openings and trenches ( 8 ) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration ( 7 ) is based on wet etch methods. |
