| 摘要 |
The present invention has its object to make it possible to produce an alpha-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles 11 a , 11 b , 11 c, and so on, a beta-SiC substrate 19 and an SiC raw material 17 are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube 40 . The radiation tube 40 is heated by an induction heating coil 23 , radiates radiation heat, and uniformly heats the crucibles 11 a , 11 b , 11 c and so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the beta-SiC substrate 19. |
