| 摘要 |
PURPOSE: A sensing circuit is provided to sense threshold voltage distribution of a flash memory cell accurately by preventing a phenomenon that a reference cell is soft-programmed. CONSTITUTION: A main cell word line driving circuit(61) applies a voltage from a reset bar pin to a word line of a main cell in sequence according to a read signal and a potential of an output enable bar pin. A main cell sensing block(62) outputs a signal according to a state of the main cell according to the main cell word line voltage and a word line signal. A reference cell word line driving circuit(63) applies a voltage from an external acceleration pin to a word line of a reference cell. A reference cell sensing block(64) outputs a signal according to the state of the reference cell according to the reference cell word line voltage. And a sense amplifier(65) compares an output signal of the main cell sensing block with an output signal of the reference cell sensing block and then outputs its result.
|
