发明名称 METHOD FOR FORMING CONTACT
摘要 PURPOSE: A method for forming a contact is provided to prevent the generation of bridges in a process for forming a conductive plug by using a line-shaped contact instead of a hole-shaped contact. CONSTITUTION: A bit line(205) is formed on a semiconductor substrate(200). An insulating spacer(206) is formed on a side of the bit line(205). A photoresist pattern is formed on the entire surface of the resultant structure. A line-shaped contact is formed by performing an etch process using the photoresist pattern. The photoresist pattern is removed. A conductive layer is formed on the entire surface of the semiconductor substrate(200). A conductive plug(220) is formed by performing a CMP process for the conductive layer.
申请公布号 KR20040007801(A) 申请公布日期 2004.01.28
申请号 KR20020040386 申请日期 2002.07.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JIN UK;PARK, SEONG CHAN
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
代理机构 代理人
主权项
地址