发明名称 |
METHOD FOR FORMING CONTACT |
摘要 |
PURPOSE: A method for forming a contact is provided to prevent the generation of bridges in a process for forming a conductive plug by using a line-shaped contact instead of a hole-shaped contact. CONSTITUTION: A bit line(205) is formed on a semiconductor substrate(200). An insulating spacer(206) is formed on a side of the bit line(205). A photoresist pattern is formed on the entire surface of the resultant structure. A line-shaped contact is formed by performing an etch process using the photoresist pattern. The photoresist pattern is removed. A conductive layer is formed on the entire surface of the semiconductor substrate(200). A conductive plug(220) is formed by performing a CMP process for the conductive layer.
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申请公布号 |
KR20040007801(A) |
申请公布日期 |
2004.01.28 |
申请号 |
KR20020040386 |
申请日期 |
2002.07.11 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, JIN UK;PARK, SEONG CHAN |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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