| 摘要 |
PURPOSE: A method for forming a bit line is provided to prevent the leakage current in a post process by removing particles of TiOx having a conductive characteristic from a surface or an inner part of an interlayer dielectric. CONSTITUTION: An interlayer dielectric(104) having a bit line contact is formed on a silicon substrate(100). A Ti layer and the first TiN layer(108) are sequentially formed on the entire surface of the interlayer dielectric(104). A photoresist layer is formed on the entire surface of the first TiN layer(108). The photoresist layer, the first TiN layer(108), and the Ti layer are etched back. The remaining photoresist layer is removed by performing an O2 plasma process. The second TiN layer and a tungsten layer for bit line are formed on the entire surface of the silicon substrate(100).
|
