| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to increase the capacitance and reduce the height of a cylinder by forming an HSG only an inner part of a capacitor bottom electrode pattern of a cylindrical structure. CONSTITUTION: An interlayer dielectric(11) having an opening portion(11a) is formed on a semiconductor substrate(10). A conductive plug(13) is formed to bury the opening portion(11a). A cap oxide layer is formed on the interlayer dielectric(11). A capacitor bottom electrode region is defined by etching the cap oxide layer. A tungsten silicide layer and a polycrystalline silicon layer are formed on the resultant structure. A photoresist layer is formed on the polycrystalline silicon layer. A top part of the interlayer dielectric(11) is exposed by etching the photoresist layer. A capacitor bottom electrode pattern is formed by removing the remaining photoresist layer and the cap oxide layer. A capacitor bottom electrode having an HSG structure is formed on the capacitor bottom electrode pattern. A dielectric layer(20) and a polycrystalline silicon layer(22) for top electrode are formed thereon.
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