| 摘要 |
PURPOSE: A method for etching a thin film is provided to be capable of securing an adequate etching volume for the thin film in order to minimize the damage of a wafer in an etching process. CONSTITUTION: A thin film(3), an anti-reflective coating(5), a sacrificial layer(7), and a photoresist pattern(20) are sequentially formed at the upper portion of a semiconductor substrate(1). An etching process is carried out at the thin film by applying an EPD(End Point Detection) process while a semiconductor manufacturing process is carried out. At this time, the thin film is etched by using the sacrificial layer as the EPD of the thin film. Preferably, the value '0' is applied as the reference of an EPD signal of the thin film.
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